FQB6N40C - 400V N-Channel MOSFET

Fairchild (now onsemi)

Datasheet Details

Part number	FQB6N40C
Manufacturer	Fairchild (now onsemi)
File Size	801.31 KB
Description	400V N-Channel MOSFET
Datasheet	FQB6N40C Datasheet

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.

Overview

FQB6N40C — N-Channel QFET® MOSFET FQB6N40C N-Channel QFET® MOSFET 400 V, 6 A, 1.

Key Features

6 A, 400 V, RDS(on) = 1.0 Ω (Max. ) @ VGS = 10 V, ID = 3 A.
Low Gate Charge (Typ. 16nC).
Low Crss (Typ. 15pF).
100% Avalanche Tested D D G S D2-PAK G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (No.

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