FQB6N80 - 800V N-Channel MOSFET

Fairchild (now onsemi)

Datasheet Details

Part number	FQB6N80
Manufacturer	Fairchild (now onsemi)
File Size	683.56 KB
Description	800V N-Channel MOSFET
Datasheet	FQB6N80 Datasheet

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supply.

Overview

FQB6N80 / FQI6N80 September 2000 QFET FQB6N80 / FQI6N80 800V N-Channel.

Key Features

5.8A, 800V, RDS(on) = 1.95Ω @VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! 3 " " 5 D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 10.

More Datasheets from Fairchild (now onsemi)

Part Number	Description
FQB6N15	150V N-Channel MOSFET
FQB6N25	250V N-Channel MOSFET
FQB6N40	400V N-Channel MOSFET
FQB6N40C	400V N-Channel MOSFET
FQB6N45	450V N-Channel MOSFET
FQB6N50	500V N-Channel MOSFET
FQB6N60	600V N-Channel MOSFET
FQB6N70	700V N-Channel MOSFET
FQB6N90	900V N-Channel MOSFET
FQB60N03L	N-Channel Logic Level PWM Optimized Power MOSFET