FQB6P25 Datasheet 250v P-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQB6P25 / FQI6P25 April 2000 QFET FQB6P25 / FQI6P25 250V P-Channel.

Datasheet Details

Part number	FQB6P25
Manufacturer	Fairchild (now onsemi)
File Size	520.06 KB
Description	250V P-Channel MOSFET
Datasheet	FQB6P25_FairchildSemiconductor.pdf

General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switching DC/DC converters.

Key Features

-6.0A, -250V, RDS(on) = 1.1Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D S ! G! G S D2-PAK FQB Series G D S I2-PAK FQI Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 10.

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