FQB7N20L Overview
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation modes. These devices are well suited for high efficiency switching DC/DC converters, switch mode...
FQB7N20L Key Features
- 6.5A, 200V, RDS(on) = 0.75Ω @VGS = 10 V Low gate charge ( typical 6.8 nC) Low Crss ( typical 8.5 pF) Fast switching 100%