FQB8P10
Description
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
- -8.0 A, -100 V, RDS(on) = 530 mΩ (Max.) @ VGS = -10 V, ID = -4.0 A
- Low Gate Charge (Typ. 12 n C)
- Low Crss (Typ. 30 p F)
- 100% Avalanche Tested
- 175°C Maximum Junction Temperature Rating
D2-PAK
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current
- Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche...
