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FQB8P10 - P-Channel MOSFET

Datasheet Summary

Description

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • -8.0 A, -100 V, RDS(on) = 530 mΩ (Max. ) @ VGS = -10 V, ID = -4.0 A.
  • Low Gate Charge (Typ. 12 nC).
  • Low Crss (Typ. 30 pF).
  • 100% Avalanche Tested.
  • 175°C Maximum Junction Temperature Rating S G S D D2-PAK G D Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage E.

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Datasheet Details

Part number FQB8P10
Manufacturer Fairchild Semiconductor
File Size 1.38 MB
Description P-Channel MOSFET
Datasheet download datasheet FQB8P10 Datasheet
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FQB8P10 — P-Channel QFET® MOSFET FQB8P10 P-Channel QFET® MOSFET -100 V, -8.0 A, 530 mΩ November 2018 Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • -8.0 A, -100 V, RDS(on) = 530 mΩ (Max.) @ VGS = -10 V, ID = -4.0 A • Low Gate Charge (Typ. 12 nC) • Low Crss (Typ.
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