FQB95N03L
Description
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features
- Fast switching
- r DS(ON) = 0.0064Ω (Typ), V GS = 10V
- r DS(ON) = 0.010Ω (Typ), VGS = 5V
- Qg (Typ) = 24n C, VGS = 5V
- Qgd (Typ) = 8n C
- CISS (Typ) = 2600p F
Applications
- DC/DC converters
DRAIN (FLANGE)
GATE SOURCE
TO-263AB MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25o C, VGS = 10V) ID Continuous (TC = 100o C, VGS = 4.5V) Continuous (TC = 25o C, VGS = 10V, Rθ JA = 43o C/W) Pulsed PD TJ, TSTG Power dissipation Derate above 25o C Operating and Storage Temperature 75 48 15
Ratings 30 ±16
Units V V A A A A W W/o C o C
Figure 4 80 0.65 -55 to 150
Thermal...
