FQB9P25 Datasheet 250V P-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

FQB9P25 250v p-channel mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	FQB9P25
Manufacturer	Fairchild (now onsemi)
File Size	775.93 KB
Description	250V P-Channel MOSFET
Download	FQB9P25 Download (PDF)

General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes.

These devices are well suited for high efficiency switching DC/DC converters.

Overview

FQB9P25 — P-Channel QFET® MOSFET FQB9P25 P-Channel QFET® MOSFET -250 V, -9.

Key Features

-9.4 A, -250 V, RDS(on) = 620 mΩ (Max. ) @ VGS = -10 V, ID = -4.7 A.
Low Gate Charge (Typ. 29 nC).
Low Crss (Typ. 27 pF).
100% Avalanche Tested G S D D2-PAK S G D Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche En.

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