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FQB9P25 - 250V P-Channel MOSFET

Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • -9.4 A, -250 V, RDS(on) = 620 mΩ (Max. ) @ VGS = -10 V, ID = -4.7 A.
  • Low Gate Charge (Typ. 29 nC).
  • Low Crss (Typ. 27 pF).
  • 100% Avalanche Tested G S D D2-PAK S G D Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche En.

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Full PDF Text Transcription

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FQB9P25 — P-Channel QFET® MOSFET FQB9P25 P-Channel QFET® MOSFET -250 V, -9.4 A, 620 mΩ November 2013 Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters. Features • -9.4 A, -250 V, RDS(on) = 620 mΩ (Max.) @ VGS = -10 V, ID = -4.7 A • Low Gate Charge (Typ. 29 nC) • Low Crss (Typ. 27 pF) • 100% Avalanche Tested G S D D2-PAK S G D Absolute Maximum Ratings TC = 25oC unless otherwise noted.
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