FQB9P25 Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and mutation modes. These devices are well suited for high efficiency switching DC/DC converters.
FQB9P25 Key Features
- 9.4 A, -250 V, RDS(on) = 620 mΩ (Max.) @ VGS = -10 V, ID = -4.7 A
- Low Gate Charge (Typ. 29 nC)
- Low Crss (Typ. 27 pF)
- 100% Avalanche Tested