Datasheet Details
| Part number | FQD12N20LTM_F085 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 639.88 KB |
| Description | 200V Logic Level N-Channel MOSFET |
| Datasheet |
 FQD12N20LTM_F085 Datasheet
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General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Key Features
- 9.0A, 200V, RDS(on) = 0.28Ω @VGS = 10 V.
- Low gate charge ( typical 16 nC).
- Low Crss ( typical 17 pF).
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability.
- Low level gate drive requirement allowing direct opration from logic drivers.
- Qualified to AEC Q101.
- RoHS Compliant D GS D-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS IAR Parameter Drain-Source Voltage.