FQD12N20LTM_F085 Datasheet 200v Logic Level N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQD12N20LTM_F085 200V Logic Level N-Channel MOSFET June 2010 FQD12N20LTM_F085 200V Logic Level N-Channel MOSFET.

Datasheet Details

Part number	FQD12N20LTM_F085
Manufacturer	Fairchild (now onsemi)
File Size	639.88 KB
Description	200V Logic Level N-Channel MOSFET
Datasheet	FQD12N20LTM_F085-FairchildSemiconductor.pdf

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, motor control.

Key Features

9.0A, 200V, RDS(on) = 0.28Ω @VGS = 10 V.
Low gate charge ( typical 16 nC).
Low Crss ( typical 17 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability.
Low level gate drive requirement allowing direct opration from logic drivers.
Qualified to AEC Q101.
RoHS Compliant D GS D-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS IAR Parameter Drain-Source Voltage.

FQD12N20LTM_F085 Distributor

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