FQD12N20LTM_F085
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Key Features
- 9.0A, 200V, RDS(on) = 0.28Ω @VGS = 10 V
- Low gate charge ( typical 16 nC)
- Low Crss ( typical 17 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Low level gate drive requirement allowing direct opration from logic drivers
- Qualified to AEC Q101
- RoHS pliant D GS D-PAK
