Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Features
- 9.0A, 200V, RDS(on) = 0.28Ω @VGS = 10 V.
- Low gate charge ( typical 16 nC).
- Low Crss ( typical 17 pF).
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability.
- Low level gate drive requirement allowing direct
opration from logic drivers.
- Qualified to AEC Q101.
- RoHS Compliant
D
GS
D-PAK
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS IAR
Parameter
Drain-Source Voltage.
FQD12N20LTM_F085 Datasheet
