Datasheet Summary
- N-Channel QFET® MOSFET
N-Channel QFET® MOSFET
250 V, 16 A, 270 mΩ
Features
- 16 A, 250 V, RDS(on) = 270 mΩ (Max.) @ VGS = 10 V, ID = 8 A
- Low Gate Charge (Typ. 41 nC)
- Low Crss (Typ. 68 pF)
- 100% Avalanche Tested
November 2013
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp...
