Datasheet4U Logo Datasheet4U.com

FQD16N25C - MOSFET

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Key Features

  • 16 A, 250 V, RDS(on) = 270 mΩ (Max. ) @ VGS = 10 V, ID = 8 A.
  • Low Gate Charge (Typ. 41 nC).
  • Low Crss (Typ. 68 pF).
  • 100% Avalanche Tested November 2013.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FQD16N25C N-Channel MOSFET ON Semiconductor
FQD12N06 60V N-Channel MOSFET Oucan Semi
FQD12N20L N-Channel MOSFET ON Semiconductor
FQD12P10TM-F085 P-Channel MOSFET ON Semiconductor
FQD13N10 N-Channel MOSFET INCHANGE

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FQD16N15 150V N-Channel MOSFET
FQD10N20 200V LOGIC N-Channel MOSFET
FQD10N20C 200V N-Channel MOSFET
FQD10N20L N-Channel MOSFET
FQD11P06 60V P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FQD16N25C — N-Channel QFET® MOSFET FQD16N25C N-Channel QFET® MOSFET 250 V, 16 A, 270 mΩ Features • 16 A, 250 V, RDS(on) = 270 mΩ (Max.) @ VGS = 10 V, ID = 8 A • Low Gate Charge (Typ. 41 nC) • Low Crss (Typ. 68 pF) • 100% Avalanche Tested November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. G S D D-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted.