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FQD2N100 Datasheet 1000v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQD2N100 / FQU2N100 — N-Channel QFET® MOSFET FQD2N100 / FQU2N100 N-Channel QFET® MOSFET 1000 V, 1.

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Features

  • 1.6 A, 1000 V, RDS(on) = 9 Ω (Max. )@ VGS = 10 V, ID = 0.8 A.
  • Low Gate Charge ( Typ. 12 nC).
  • Low Crss ( Typ. 5 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant D D G S D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Vo.

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FQD2N100 Distributor