Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
Features
- 1.6 A, 1000 V, RDS(on) = 9 Ω (Max. )@ VGS = 10 V, ID = 0.8 A.
- Low Gate Charge ( Typ. 12 nC).
- Low Crss ( Typ. 5 pF).
- 100% Avalanche Tested.
- RoHS Compliant
D D
G S
D-PAK
GDS
I-PAK
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Vo.
FQD2N100 Datasheet
