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FQD2N80 - 800V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • 1.8A, 800V, RDS(on) = 6.3Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 5.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S 3 D-PAK FQD Series I-PAK G D S FQU Series " " 5 ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C).

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Full PDF Text Transcription for FQD2N80 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FQD2N80. For precise diagrams, and layout, please refer to the original PDF.

FQD2N80 / FQU2N80 September 2000 QFET FQD2N80 / FQU2N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are prod...

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ese N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. TM Features • • • • • • 1.8A, 800V, RDS(on) = 6.3Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 5.

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