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FQD4N50 Datasheet 500v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQD4N50 / FQU4N50 N-Channel MOSFET FQD4N50 / FQU4N50 N-Channel QFET® MOSFET 500 V, 2.6 A, 2.

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Features

  • 2.6 A, 500 V, RDS(on)=2.7 Ω(Max. )@VGS=10 V, ID=1.3 A.
  • Low Gate Charge (Typ. 10 nC).
  • Low Crss (Typ. 6.0 pF).
  • 100% Avalanche Tested                    .
  •  4 4.
  •  ; 4 ; !5 8         .
  •          1,%(62   1,/))62     8     9  .
  •      8.

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