FQD5N15 - 150V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

• 4.3 A, 150 V, RDS(on) = 800 mΩ (Max. ) @ VGS = 10 V, ID = 2.15 A.
• Low Gate Charge (Typ. 5.4 nC).
• Low Crss (Typ. 7.5 pF).
• 100% Avalanche Tested D D G S D-PAK G Absolute Maximum Ratings TC = 25oC unless otherwise noted.  ,
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