Datasheet Summary
FQD5N60C / FQU5N60C N-Channel MOSFET
March 2013
N-Channel QFET MOSFET
600 V, 2.8 A, 2.5 Ω Description
FQD5N60C / FQU5N60C
Features
- 2.8 A, 600 V, RDS(on) = 2.5 Ω (Max) @VGS = 10 V, ID = 1.4 A
- Low Gate Charge (Typ. 15 nC)
- Low Crss (Typ. 6.5 pF)
- 100% Avalanche Tested
- RoHS pliant
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction...
