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FQD6P25 - 250V P-Channel MOSFET

Datasheet Summary

Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • -4.7A, -250V, RDS(on) = 1.1Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G! G S S !   D-PAK FQD Series I-PAK G D S FQU Series   ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C).

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Datasheet Details

Part number FQD6P25
Manufacturer Fairchild Semiconductor
File Size 511.57 KB
Description 250V P-Channel MOSFET
Datasheet download datasheet FQD6P25 Datasheet
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Full PDF Text Transcription

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FQD6P25 / FQU6P25 April 2000 QFET FQD6P25 / FQU6P25 250V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters. TM Features • • • • • • -4.7A, -250V, RDS(on) = 1.
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