Fairchild Semiconductor FQD7P06
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.| Part No. | FQD7P06 |
|---|---|
| Datasheet | FQD7P06 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | 60V P-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. TMFEATURES
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● -5.4A, -60V, RDS(on) = 0.45Ω @VGS = -10 V Low gate charge ( typical 6.3 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability S D G! !
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● G S D-PAK FQD Series I-PAK G D S FQU Series ! D
ABSOLUTE MAXIMUM RATINGS
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQD7P06 / FQU7P06 -60 -5.4 -3.42 -21.6 ± 25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) 90 -5.4 2.8 -7.0 2.5 28 0.22 -55 to +150 300...
