FQD9N08
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and mutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
Features
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- - 9.3A, 80V, RDS(on) = 0.21Ω @VGS = 10 V Low gate charge ( typical 5.9 n C) Low Crss ( typical 13 p F) Fast switching 100% avalanche tested Improved dv/dt capability
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D-PAK
FQD Series
I-PAK
FQU Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage
- Continuous (TC = 25°C) Drain Current
- Continuous (TC = 100°C) Drain Current
- Pulsed
(Note 1)
FQD9N08 /...
