FQG4904 Description
These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for electronic lamp ballast based on half...
FQG4904 Key Features
- N-Channel 0.46A, 400V, RDS(on) = 3.0 Ω @ VGS = 10 V P-Channel -0.46A, -400V, RDS(on) = 3.0 Ω @ VGS = -10 V
- Low gate charge ( typical N-Channel 7.6 nC) ( typical P-Channel 20.0 nC)
- Fast switching
- Improved dv/dt capability