FQG4904
Description
These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for electronic lamp ballast based on half bridge.
Features
- N-Channel 0.46A, 400V, RDS(on) = 3.0 Ω @ VGS = 10 V P-Channel -0.46A, -400V, RDS(on) = 3.0 Ω @ VGS = -10 V
- Low gate charge ( typical N-Channel 7.6 n C) ( typical P-Channel 20.0 n C)
- Fast switching
- Improved dv/dt capability
D2 D2 D1 D1 G2 S2 G1 S1 Pin #1
8-DIP
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS dv/dt PD TJ, TSTG
TA = 25°C unless otherwise noted
Parameter Drain-Source Voltage
- Continuous (TA = 25°C) Drain Current
- Continuous (TA = 100°C) Drain Curent
- Pulsed
(Note 1)
N-Channel 400 0.46 0.29...
