FQH44N10 - MOSFET

Product Overview

Fairchild Semiconductor

Part number	FQH44N10
Manufacturer	Fairchild Semiconductor
File Size	1.15 MB
Description	MOSFET
Datasheet	FQH44N10 Datasheet
Additional preview pages of the FQH44N10 datasheet.

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

48 A, 100 V, RDS(on) = 39 m (Max. ) @ VGS = 10 V, ID = 24 A.
Low Gate Charge (Typ. 48 nC).
Low Crss (Typ. 85 pF).
100% Avalanche Tested.
175C Maximum Junction Temperature Rating D G D S TO-247 Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100.

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Published: Jan 16, 2017 |