FQI12N20L Datasheet PDF - Fairchild Semiconductor 200V LOGIC N-Channel MOSFET Specs

FQI12N20L - 200V LOGIC N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

11.6A, 200V, RDS(on) = 0.28Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct opration from logic drivers D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Param.

Datasheet Details

Part number	FQI12N20L
Manufacturer	Fairchild Semiconductor
File Size	607.28 KB
Description	200V LOGIC N-Channel MOSFET
Datasheet	FQI12N20L Datasheet
Additional preview pages of the FQI12N20L datasheet.

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Full PDF Text Transcription

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FQB12N20L / FQI12N20L February 2001 FQB12N20L / FQI12N20L 200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, motor control. Features • • • • • • • 11.6A, 200V, RDS(on) = 0.

Published: Apr 1, 2005 |