FQI12N20L
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, motor control.
Features
- -
- -
- -
- 11.6A, 200V, RDS(on) = 0.28Ω @VGS = 10 V Low gate charge ( typical 16 n C) Low Crss ( typical 17 p F) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct opration from logic drivers
!
"
G!
! "
" "
D2-PAK
FQB Series
I2-PAK
FQI Series
!
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage
- Continuous (TC = 25°C) Drain Current
- Continuous...
