FQI12N50 Datasheet PDF - Fairchild Semiconductor 500V N-Channel MOSFET Specs

FQI12N50 - 500V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

12.1A, 500V, RDS(on) = 0.49Ω @VGS = 10 V Low gate charge ( typical 39 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
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G! G S D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuou.

Datasheet Details

Part number	FQI12N50
Manufacturer	Fairchild Semiconductor
File Size	617.23 KB
Description	500V N-Channel MOSFET
Datasheet	FQI12N50 Datasheet
Additional preview pages of the FQI12N50 datasheet.

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Full PDF Text Transcription

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FQB12N50 / FQI12N50 QFET FQB12N50 / FQI12N50 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction, electronic lamp ballasts based on half bridge. TM Features • • • • • • 12.1A, 500V, RDS(on) = 0.

Published: Apr 1, 2005 |