Datasheet4U Logo Datasheet4U.com

FQI13N10 - 100V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 12.8A, 100V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FQI1N60 1.3A N-Channel MOSFET OuCan
FQI27N25TU-F085 N-Channel MOSFET ON Semiconductor
FQI4N60 600V 4A N-Channel MOSFET Oucan Semi
FQI4N65 4A N-Channel MOSFET Oucan Semi
FQI5N60C N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (onsemi)

Part Number Description
FQI13N10L 100V LOGIC N-Channel MOSFET
FQI13N06 60V N-Channel MOSFET
FQI13N06L 60V LOGIC N-Channel MOSFET
FQI13N50 500V N-Channel MOSFET
FQI13N50C 500V N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
FQB13N10 / FQI13N10 January 2001 QFET FQB13N10 / FQI13N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. D TM Features • • • • • • • 12.8A, 100V, RDS(on) = 0.
Published: |