FQI15P12 Key Features
- 15A, -120V, RDS(on) = 0.2Ω @VGS = -10 V
- Low gate charge ( typical 29 nC)
- Low Crss ( typical 110 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- 175°C maximum junction temperature rating
- Part: FQI15P12
- Description: 120V P-Channel MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 652.31 KB
Related Fairchild Semiconductor Datasheets
| Part Number | Description |
|---|---|
| FQI10N20 | 200V N-Channel MOSFET |
| FQI10N20C | 200V N-Channel MOSFET |
| FQI10N20L | 200V LOGIC N-Channel MOSFET |
| FQI10N60C | 600V N-Channel MOSFET |
| FQI11N40 | 400V N-Channel MOSFET |