FQI19N20C
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
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Features
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- - 19.0A, 200V, RDS(on) = 0.17Ω @VGS = 10 V Low gate charge ( typical 40.5 n C) Low Crss ( typical 85 p F) Fast switching 100% avalanche tested Improved dv/dt capability
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D2-PAK
FQB Series
I2-PAK
FQI Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage
- Continuous (TC = 25°C) Drain Current
- Continuous (TC = 100°C)...
