FQI1P50
Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and mutation modes. These devices are well suited for electronic lamp ballasts based on the plementary half bridge topology.
Features
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- - -1.5A, -500V, RDS(on) = 10.5Ω @VGS = -10 V Low gate charge ( typical 11 n C) Low Crss ( typical 6.0 p F) Fast switching 100% avalanche tested Improved dv/dt capability
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G! G S
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- D2-PAK
FQB Series
I2-PAK
FQI Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage
- Continuous (TC = 25°C) Drain Current
- Continuous (TC = 100°C) Drain Current
- Pulsed
(Note 1)
FQB1P50 / FQI1P50 -500 -1.5 -0.95 -6.0 ±...
