FQI27N25 Datasheet PDF - Fairchild Semiconductor 250V N-Channel MOSFET Specs

FQI27N25 - 250V N-Channel MOSFET

Datasheet Summary

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

25.5 A, 250 V, RDS(on) = 110 mΩ (Max. ) @ VGS = 10 V, ID = 12.75 A.
Low Gate Charge (Typ. 50 nC).
Low Crss (Typ. 45 pF).
100% Avalanche Tested D GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. .
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Datasheet Details

Part number	FQI27N25
Manufacturer	Fairchild Semiconductor
File Size	875.99 KB
Description	250V N-Channel MOSFET
Datasheet	FQI27N25 Datasheet
Additional preview pages of the FQI27N25 datasheet.

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Full PDF Text Transcription

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FQI27N25 — N-Channel QFET® MOSFET FQI27N25 N-Channel QFET® MOSFET 250 V, 25.5 A, 110 mΩ November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 25.5 A, 250 V, RDS(on) = 110 mΩ (Max.) @ VGS = 10 V, ID = 12.75 A • Low Gate Charge (Typ. 50 nC) • Low Crss (Typ. 45 pF) • 100% Avalanche Tested D GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted.

Published: Apr 1, 2005 |