FQI27P06 - 60V P-Channel MOSFET

Product Overview

Fairchild Semiconductor

Part number	FQI27P06
Manufacturer	Fairchild Semiconductor
File Size	700.35 KB
Description	60V P-Channel MOSFET
Datasheet	FQI27P06 Datasheet
Additional preview pages of the FQI27P06 datasheet.

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

-27A, -60V, RDS(on) = 0.07Ω @VGS = -10 V Low gate charge ( typical 33 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G! G S !.
▶ ▲.
S D2-PAK FQB Series G D S I2-PAK FQI Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltag.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Apr 1, 2005 |