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FQI27P06 - 60V P-Channel MOSFET

Datasheet Summary

Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • -27A, -60V, RDS(on) = 0.07Ω @VGS = -10 V Low gate charge ( typical 33 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G! G S !.
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  • S D2-PAK FQB Series G D S I2-PAK FQI Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltag.

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Datasheet Details

Part number FQI27P06
Manufacturer Fairchild Semiconductor
File Size 700.35 KB
Description 60V P-Channel MOSFET
Datasheet download datasheet FQI27P06 Datasheet
Additional preview pages of the FQI27P06 datasheet.

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Full PDF Text Transcription

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FQB27P06 / FQI27P06 May 2001 QFET FQB27P06 / FQI27P06 60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products. TM Features • • • • • • • -27A, -60V, RDS(on) = 0.
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