FQI2N60 Datasheet PDF - Fairchild Semiconductor 600V N-Channel MOSFET Specs

FQI2N60 - 600V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

2.4A, 600V, RDS(on) = 4.7Ω @VGS = 10 V Low gate charge ( typical 9.0 nC) Low Crss ( typical 5.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D2-PAK FQB Series G D S I2-PAK FQI Series G! ! " " " ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC =.

Datasheet Details

Part number	FQI2N60
Manufacturer	Fairchild Semiconductor
File Size	580.92 KB
Description	600V N-Channel MOSFET
Datasheet	FQI2N60 Datasheet
Additional preview pages of the FQI2N60 datasheet.

📁 Similar Datasheet

FQI27N25TU-F085 - N-Channel MOSFET (ON Semiconductor)

FQI1N60 - 1.3A N-Channel MOSFET (OuCan)

FQI4N60 - 600V 4A N-Channel MOSFET (Oucan Semi)

FQI4N65 - 4A N-Channel MOSFET (Oucan Semi)

FQI5N60C - N-Channel MOSFET (ON Semiconductor)

FQI7N60 - N-Channel MOSFET (ON Semiconductor)

FQI8N60C - N-Channel MOSFET (ON Semiconductor)

Full PDF Text Transcription

Click to expand full text

FQB2N60 / FQI2N60 April 2000 QFET FQB2N60 / FQI2N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. TM Features • • • • • • 2.4A, 600V, RDS(on) = 4.7Ω @VGS = 10 V Low gate charge ( typical 9.0 nC) Low Crss ( typical 5.

Published: Apr 1, 2005 |