FQI2NA90 Datasheet PDF - Fairchild Semiconductor 900V N-Channel MOSFET Specs

FQI2NA90 - 900V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

2.8A, 900V, RDS(on) = 5.8 Ω @ VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 6.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 10.

Datasheet Details

Part number	FQI2NA90
Manufacturer	Fairchild Semiconductor
File Size	707.21 KB
Description	900V N-Channel MOSFET
Datasheet	FQI2NA90 Datasheet
Additional preview pages of the FQI2NA90 datasheet.

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Full PDF Text Transcription

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FQB2NA90 / FQI2NA90 September 2000 QFET FQB2NA90 / FQI2NA90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. TM Features • • • • • • 2.8A, 900V, RDS(on) = 5.8 Ω @ VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 6.

Published: Apr 1, 2005 |