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FQI3N90 Datasheet 900v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQB3N90 / FQI3N90 September 2000 QFET FQB3N90 / FQI3N90 900V N-Channel.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supply.

Key Features

  • 3.6A, 900V, RDS(on) = 4.25 Ω @ VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 8.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 1.

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