FQI3P50 Datasheet 500v P-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQB3P50 / FQI3P50 August 2000 QFET FQB3P50 / FQI3P50 500V P-Channel.

Datasheet Details

Part number	FQI3P50
Manufacturer	Fairchild (now onsemi)
File Size	645.59 KB
Description	500V P-Channel MOSFET
Datasheet	FQI3P50_FairchildSemiconductor.pdf

General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for electronic lamp ballast based on complimentary half bridge.

Key Features

-2.7A, -500V, RDS(on) = 4.9Ω @VGS = -10 V Low gate charge ( typical 18 nC) Low Crss ( typical 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D S !.
G! G S ▶ ▲.
D2-PAK FQB Series G D S I2-PAK FQI Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuo.

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