FQI3P50
Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for electronic lamp ballast based on plimentary half bridge.
Features
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- - -2.7A, -500V, RDS(on) = 4.9Ω @VGS = -10 V Low gate charge ( typical 18 n C) Low Crss ( typical 9.5 p F) Fast switching 100% avalanche tested Improved dv/dt capability
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G! G S
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- D2-PAK
FQB Series
I2-PAK
FQI Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage
- Continuous (TC = 25°C) Drain Current
- Continuous (TC = 100°C) Drain Current
- Pulsed
(Note 1)
FQB3P50 / FQI3P50 -500 -2.7 -1.71 -10.8 ± 30
(Note 2)...
