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FQI44N10 Datasheet 100v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQB44N10 / FQI44N10 June 2000 QFET FQB44N10 / FQI44N10 100V N-Channel.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

Key Features

  • 43.5A, 100V, RDS(on) = 0.039Ω @VGS = 10 V Low gate charge ( typical 48 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuou.

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