FQI45N15V2 Datasheet PDF - Fairchild Semiconductor 150V N-Channel MOSFET Specs

FQI45N15V2 - 150V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

45A, 150V, RDS(on) = 0.04Ω @VGS = 10 V Low gate charge ( typical 72 nC) Low Crss ( typical 135 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D2-PAK FQB Series I2-PAK G D S FQI Series G! ! " " " ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous.

Datasheet Details

Part number	FQI45N15V2
Manufacturer	Fairchild Semiconductor
File Size	668.09 KB
Description	150V N-Channel MOSFET
Datasheet	FQI45N15V2 Datasheet
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Full PDF Text Transcription

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FQB45N15V2/FQI45N15V2 QFET FQB45N15V2/FQI45N15V2 150V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required. ® Features • • • • • • 45A, 150V, RDS(on) = 0.

Published: Apr 1, 2005 |