Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Features
- 4.4A, 600V, RDS(on) = 2.2Ω @VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 8.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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D2-PAK
FQB Series
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I2-PAK
FQI Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 1.
FQI4N60 Datasheet
