Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Features
- 3.9A, 800V, RDS(on) = 3.6Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 8.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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G
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3
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5
D2-PAK
FQB Series
G D S
I2-PAK
FQI Series
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S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 10.
FQI4N80 Datasheet
