Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
Features
- 4.2 A, 900 V, RDS(on) = 3.3 Ω (Max. ) @ VGS = 10 V, ID = 2.1 A.
- Low Gate Charge (Typ. 24 nC).
- Low Crss (Typ. 9.5 pF).
- 100% Avalanche Tested
D
GDS
I2-PAK
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, Tstg TL
Parameter
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanc.
FQI4N90 Datasheet
