Datasheet4U Logo Datasheet4U.com

FQI4P25 - 250V P-Channel MOSFET

Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • -4.0A, -250V, RDS(on) = 2.1Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 10.3 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G! G S !.
  • ▶ ▲.
  • S D2-PAK FQB Series G D S I2-PAK FQI Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continu.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FQI4N60 600V 4A N-Channel MOSFET Oucan Semi
FQI4N65 4A N-Channel MOSFET Oucan Semi
FQI1N60 1.3A N-Channel MOSFET OuCan
FQI27N25TU-F085 N-Channel MOSFET ON Semiconductor
FQI5N60C N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (onsemi)

Part Number Description
FQI4P40 400V P-Channel MOSFET
FQI44N08 80V N-Channel MOSFET
FQI44N10 100V N-Channel MOSFET
FQI45N15V2 150V N-Channel MOSFET
FQI46N15 150V N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
FQB4P25 / FQI4P25 December 2000 QFET FQB4P25 / FQI4P25 250V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters. TM Features • • • • • • -4.0A, -250V, RDS(on) = 2.1Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 10.
Published: |