Datasheet4U Logo Datasheet4U.com

FQI5N20L - 200V LOGIC N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 4.5A, 200V, RDS(on) = 1.2Ω @VGS = 10 V Low gate charge ( typical 4.8 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct operation from logic drivers D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Para.

📥 Download Datasheet

Datasheet preview – FQI5N20L

Datasheet Details

Part number FQI5N20L
Manufacturer Fairchild Semiconductor
File Size 539.90 KB
Description 200V LOGIC N-Channel MOSFET
Datasheet download datasheet FQI5N20L Datasheet
Additional preview pages of the FQI5N20L datasheet.

📁 Similar Datasheet

  • FQI5N60C - N-Channel MOSFET (ON Semiconductor)
  • FQI1N60 - 1.3A N-Channel MOSFET (OuCan)
  • FQI27N25TU-F085 - N-Channel MOSFET (ON Semiconductor)
  • FQI4N60 - 600V 4A N-Channel MOSFET (Oucan Semi)
  • FQI4N65 - 4A N-Channel MOSFET (Oucan Semi)
  • FQI7N60 - N-Channel MOSFET (ON Semiconductor)
  • FQI8N60C - N-Channel MOSFET (ON Semiconductor)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FQB5N20L / FQI5N20L December 2000 QFET FQB5N20L / FQI5N20L 200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control. TM Features • • • • • • • 4.5A, 200V, RDS(on) = 1.2Ω @VGS = 10 V Low gate charge ( typical 4.8 nC) Low Crss ( typical 6.
Published: |