Datasheet4U Logo Datasheet4U.com

FQI6N40C - 400V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 6A, 400V, RDS(on) = 1.0 Ω @VGS = 10 V Low gate charge ( typical 16nC) Low Crss ( typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D2-PAK FQB Series I2-PAK G D S FQI Series G! ! " " " ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FQI1N60 1.3A N-Channel MOSFET OuCan
FQI27N25TU-F085 N-Channel MOSFET ON Semiconductor
FQI4N60 600V 4A N-Channel MOSFET Oucan Semi
FQI4N65 4A N-Channel MOSFET Oucan Semi
FQI5N60C N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (onsemi)

Part Number Description
FQI6N40 400V N-Channel MOSFET
FQI6N45 450V N-Channel MOSFET
FQI6N15 150V N-Channel MOSFET
FQI6N25 250V N-Channel MOSFET
FQI6N50 500V N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
FQB6N40C/FQI6N40C QFET FQB6N40C/FQI6N40C 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. TM Features • • • • • • 6A, 400V, RDS(on) = 1.
Published: |