FQI6P25
Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switching DC/DC converters.
Features
- -
- -
- - -6.0A, -250V, RDS(on) = 1.1Ω @VGS = -10 V Low gate charge ( typical 21 n C) Low Crss ( typical 20 p F) Fast switching 100% avalanche tested Improved dv/dt capability
!
G! G S
D2-PAK
FQB Series
I2-PAK
FQI Series
!
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage
- Continuous (TC = 25°C) Drain Current
- Continuous (TC = 100°C) Drain Current
- Pulsed
(Note 1)
FQB6P25 / FQI6P25 -250 -6.0 -3.8 -24 ±30
(Note 2) (Note 1) (Note 1)...
