FQI6P25 - 250V P-Channel MOSFET

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Fairchild Semiconductor

Part number	FQI6P25
Manufacturer	Fairchild Semiconductor
File Size	520.06 KB
Description	250V P-Channel MOSFET
Datasheet	FQI6P25 Datasheet
Additional preview pages of the FQI6P25 datasheet.

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

-6.0A, -250V, RDS(on) = 1.1Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D S ! G! G S D2-PAK FQB Series G D S I2-PAK FQI Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 10.

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Published: Apr 1, 2005 |