FQI9P25 Datasheet | Fairchild Semiconductor

Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and mutation modes. These devices are well suited for high efficiency switching DC/DC converters. Features - - - - - - -9.4A, -250V, RDS(on) = 0.62Ω @VGS = -10 V Low gate charge ( typical 29 n C) Low Crss ( typical 27 p F) Fast switching 100% avalanche tested Improved dv/dt capability ! - - G! G S ▶ ▲ - D2-PAK FQB Series I2-PAK FQI Series ! Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB9P25 / FQI9P25 -250 -9.4 -5.9 -37.6 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V m J A m J V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) - Power Dissipation (TC = 25°C) 650 -9.4 12 -5.5 3.13 120 0.96 -55 to +150 300 TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient - Thermal Resistance, Junction-to-Ambient Typ ---Max 1.04 40 62.5 Units °C/W °C/W °C/W - When mounted on the minimum pad size remended (PCB...