Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
Features
- 0.30 A, 600 V, RDS(on) = 11.5 Ω (Max. ) @ VGS = 10 V, ID = 0.15 A.
- Low Gate Charge (Typ. 4.8 nC).
- Low Crss (Typ. 3.5 pF).
- 100% Avalanche Tested
D
GDS
TO-92
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol
Parameter
VDSS ID
IDM VGSS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current.
FQN1N60C Datasheet
