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FQN1N60C - N-Channel QFET MOSFET

Datasheet Summary

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 0.30 A, 600 V, RDS(on) = 11.5 Ω (Max. ) @ VGS = 10 V, ID = 0.15 A.
  • Low Gate Charge (Typ. 4.8 nC).
  • Low Crss (Typ. 3.5 pF).
  • 100% Avalanche Tested D GDS TO-92 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current.

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Datasheet Details

Part number FQN1N60C
Manufacturer Fairchild Semiconductor
File Size 754.27 KB
Description N-Channel QFET MOSFET
Datasheet download datasheet FQN1N60C Datasheet
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FQN1N60C — N-Channel QFET® MOSFET FQN1N60C N-Channel QFET® MOSFET 600 V, 0.30 A, 11.5 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. December 2013 Features • 0.30 A, 600 V, RDS(on) = 11.5 Ω (Max.) @ VGS = 10 V, ID = 0.15 A • Low Gate Charge (Typ. 4.8 nC) • Low Crss (Typ. 3.5 pF) • 100% Avalanche Tested D GDS TO-92 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted.
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