Datasheet Details
| Part number | FQP10N60C |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 1.30 MB |
| Description | 600V N-Channel MOSFET |
| Datasheet |
 FQP10N60C Datasheet
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General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Key Features
- 9.5 A, 600 V, RDS(on) = 730 mΩ (Max. ) @ VGS = 10 V, ID = 4.75 A.
- Low Gate Charge (Typ. 44 nC).
- Low Crss (Typ. 18 pF).
- 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Dr.