FQP10N60C Key Features
- 9.5 A, 600 V, RDS(on) = 730 mΩ (Max.) @ VGS = 10 V, ID = 4.75 A
- Low Gate Charge (Typ. 44 nC)
- Low Crss (Typ. 18 pF)
- 100% Avalanche Tested
- Part: FQP10N60C
- Description: 600V N-Channel MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 1.30 MB
Other FQP10N60C Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
| Oucan Semi Oucan Semi |
FQP10N60 | N-Channel MOSFET |