Fairchild Semiconductor FQP10N60C
This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi-ciency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.| Part No. | FQP10N60C |
|---|---|
| Datasheet | FQP10N60C Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | 600V N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.FEATURES
● 9.5 A, 600 V, RDS(on) = 730 mΩ (Max.) @ VGS = 10 V, ID = 4.75 A● Low Gate Charge (Typ. 44 nC)
● Low Crss (Typ. 18 pF)
● 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S
ABSOLUTE MAXIMUM RATINGS
TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Dr
