FQP12N60C
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Key Features
- 12 A, 600 V, RDS(on) = 650 mΩ (Max.) @ VGS = 10 V, ID = 6 A
- Low Gate Charge (Typ. 48 nC)
- Low Crss (Typ. 21 pF)
- 100% Avalanche Tested D GDS TO-220
