FQP13N50CF Datasheet | Fairchild Semiconductor

.. FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET May 2006 FRFET FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Features - 13A, 500V, RDS(on) = 0.54Ω @VGS = 10 V - Low gate charge (typical 43 n C) - Low Crss (typical 20p F) - Fast switching - 100% avalanche tested - Improved dv/dt capability - Fast recovery body diode (typical 100ns) Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. G G DS TO-220 FDP Series GD S TO-220F FQPF...