Description
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.
Features
- -15 A, -120 V, RDS(on) = 0.2 Ω (Max. ) @ VGS=-10 V, ID = -7.5 A.
- Low Gate Charge (Typ. 29 nC).
- Low Crss (Typ. 110 pF).
- 100% Avalanche Tested.
- 175°C Maximum Junction Temperature Rating
S
G
GDS
TO-220
GDS
TO-220F
Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous.
FQP15P12 Datasheet
