Description
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.
Features
- - 17 A, - 60 V, RDS(on) = 120 m (Max. ) @ VGS = - 10 V, ID = - 8.5 A.
- Low Gate Charge (Typ.21 nC).
- Low Crss (Typ. 80 pF).
- 100% Avalanche Tested.
- 175C Maximum Junction Temperature Rating
S
G D S
TO-220
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
(Note.
FQP17P06 Datasheet
