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FQP19N10L - 100V LOGIC N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 19A, 100V, RDS(on) = 0.1Ω @VGS = 10 V Low gate charge ( typical 14 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drai.

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Datasheet Details

Part number FQP19N10L
Manufacturer Fairchild Semiconductor
File Size 624.72 KB
Description 100V LOGIC N-Channel MOSFET
Datasheet download datasheet FQP19N10L Datasheet
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FQP19N10L August 2000 QFET FQP19N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control. TM Features • • • • • • • 19A, 100V, RDS(on) = 0.
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