FQP1P50
Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for electronic lamp ballast based on plementary half bridge.
Features
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- - -1.5A, -500V, RDS(on) = 10.5Ω @VGS = -10 V Low gate charge ( typical 11 n C) Low Crss ( typical 6.0 p F) Fast switching 100% avalanche tested Improved dv/dt capability
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G! G DS
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- TO-220
FQP Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage
- Continuous (TC = 25°C) Drain Current
- Continuous (TC = 100°C) Drain Current
- Pulsed
(Note 1)
FQP1P50 -500 -1.5 -0.95 -6.0 ± 30
(Note 2) (Note 1) (Note 1) (Note...
