FQP2N90
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
Key Features
- 2.2 A, 900 V, RDS(on) = 7.2 Ω (Max.) @ VGS = 10 V, ID = 1.1 A
- Low Gate Charge (Typ. 12 nC)
- Low Crss (Typ. 5.5 pF)
- 100% Avalanche Tested
